IRF3710PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Length :

10.54mm

Rise Time :

58ns

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Termination :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

100V

Max Junction Temperature (Tj) :

175°C

FET Type :

N-Channel

Lead Free :

Lead Free

Number of Elements :

1

Resistance :

23mOhm

Published :

2004

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3130pF @ 25V

Continuous Drain Current (ID) :

57A

Radiation Hardening :

No

Recovery Time :

220 ns

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

280 mJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

23m Ω @ 28A, 10V

Dual Supply Voltage :

100V

Height :

19.8mm

Number of Terminations :

3

Series :

HEXFET®

Threshold Voltage :

4V

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

Number of Pins :

3

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Number of Channels :

1

Nominal Vgs :

4 V

Mount :

Through Hole

Current Rating :

57A

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Turn On Delay Time :

12 ns

Lead Pitch :

2.54mm

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Element Configuration :

Single

Power Dissipation :

200W

Width :

4.69mm

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

47 ns

Turn-Off Delay Time :

45 ns

Power Dissipation-Max :

200W Tc

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)