IRF3710L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

280 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.023Ohm

Terminal Position :

Single

Terminal Finish :

Tin/Lead (Sn/Pb)

Peak Reflow Temperature (Cel) :

225

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e0

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power Dissipation-Max :

200W Tc

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

DS Breakdown Voltage-Min :

100V

HTS Code :

8541.29.00.95

Input Capacitance (Ciss) (Max) @ Vds :

3130pF @ 25V

RoHS Status :

Non-RoHS Compliant

Drain Current-Max (Abs) (ID) :

57A

Packaging :

Tube

Published :

2007

Mounting Type :

Through Hole

JESD-30 Code :

R-PSIP-T3

FET Type :

N-Channel

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Surface Mount :

No

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

57A Tc

Number of Terminations :

3

Pulsed Drain Current-Max (IDM) :

180A

Rds On (Max) @ Id, Vgs :

23m Ω @ 28A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®