IRF3709ZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Number of Elements :

1

Series :

HEXFET®

Power Dissipation-Max :

79W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

30V

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 21A, 10V

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

30V

Drain-source On Resistance-Max :

0.0063Ohm

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Avalanche Energy Rating (Eas) :

60 mJ

Pulsed Drain Current-Max (IDM) :

350A

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

225

Current - Continuous Drain (Id) @ 25°C :

87A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

42A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

TIN LEAD

Published :

2004

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

2130pF @ 15V