IRF3709ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

4.7 ns

Radiation Hardening :

No

Package / Case :

TO-220-3

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Case Connection :

DRAIN

Turn-Off Delay Time :

16 ns

Number of Elements :

1

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

4.69mm

Number of Terminations :

3

Published :

2004

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

13 ns

Power Dissipation-Max :

79W Tc

Series :

HEXFET®

Current Rating :

87A

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

87A

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

6.3m Ω @ 21A, 10V

Element Configuration :

Single

Nominal Vgs :

20 V

Factory Lead Time :

16 Weeks

Mounting Type :

Through Hole

Threshold Voltage :

2.25V

Power Dissipation :

79mW

Avalanche Energy Rating (Eas) :

60 mJ

Resistance :

6.3mOhm

Height :

8.763mm

Input Capacitance (Ciss) (Max) @ Vds :

2130pF @ 15V

Number of Pins :

3

FET Type :

N-Channel

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

42A

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

87A Tc

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Recovery Time :

24 ns

Length :

10.5156mm

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Voltage - Rated DC :

30V

RoHS Status :

ROHS3 Compliant

Rise Time :

41ns