IRF3709ZLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6.3mOhm @ 21A, 10V

Max Operating Temperature :

175°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Height :

9.65mm

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

2130pF @ 15V

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Power Dissipation :

79W

Supplier Device Package :

TO-262

Mount :

Through Hole

Element Configuration :

Single

Length :

10.668mm

Voltage - Rated DC :

30V

Min Operating Temperature :

-55°C

Power Dissipation-Max :

79W Tc

Resistance :

6.3mOhm

Drain to Source Breakdown Voltage :

30V

Drain to Source Resistance :

6.3mOhm

Current Rating :

87A

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

FET Type :

N-Channel

Rds On Max :

6.3 mΩ

Mounting Type :

Through Hole

Lead Free :

Lead Free

Number of Pins :

3

Rise Time :

41ns

Gate to Source Voltage (Vgs) :

20V

Width :

4.826mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

87A

RoHS Status :

RoHS Compliant

Series :

HEXFET®

Turn-Off Delay Time :

16 ns

Radiation Hardening :

No

Turn On Delay Time :

13 ns

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

87A Tc

Published :

2004

Fall Time (Typ) :

4.7 ns

Input Capacitance :

2.13nF