IRF3709STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

9.65mm

JESD-609 Code :

e3

FET Type :

N-Channel

Continuous Drain Current (ID) :

90A

Element Configuration :

Single

Transistor Element Material :

SILICON

Radiation Hardening :

No

Turn-Off Delay Time :

21 ns

Input Capacitance (Ciss) (Max) @ Vds :

2672pF @ 16V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Rise Time :

171ns

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

75A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation-Max :

3.1W Ta 120W Tc

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Mounting Type :

Surface Mount

Height :

4.826mm

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

20 V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

9.2 ns

Turn On Delay Time :

11 ns

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2004

Series :

HEXFET®

Drain-source On Resistance-Max :

0.009Ohm

Terminal Form :

Gull wing

Length :

10.668mm

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Mount :

Surface Mount

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

120W