IRF3709STRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form :

Gull wing

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 10V

Drain-source On Resistance-Max :

0.009Ohm

Avalanche Energy Rating (Eas) :

382 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2672pF @ 16V

Vgs (Max) :

±20V

Surface Mount :

yes

Case Connection :

DRAIN

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

75A

Vgs(th) (Max) @ Id :

3V @ 250µA

Published :

2001

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

360A

Transistor Element Material :

SILICON

Series :

HEXFET®

Power Dissipation-Max :

3.1W Ta 120W Tc

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

DS Breakdown Voltage-Min :

30V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

Non-RoHS Compliant