IRF3709SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

90A

Power Dissipation :

120W

Rds On (Max) @ Id, Vgs :

9mOhm @ 15A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

21 ns

Operating Temperature :

-55°C~150°C TJ

Rise Time :

171ns

Series :

HEXFET®

Voltage - Rated DC :

30V

Resistance :

9mOhm

RoHS Status :

ROHS3 Compliant

Length :

10.668mm

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

3.1W Ta 120W Tc

Height :

4.826mm

Nominal Vgs :

3 V

Rds On Max :

9 mΩ

Fall Time (Typ) :

9.2 ns

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Threshold Voltage :

3V

Turn On Delay Time :

11 ns

Max Operating Temperature :

150°C

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Published :

2001

Continuous Drain Current (ID) :

90A

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Dual Supply Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Drain to Source Resistance :

10.5mOhm

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Input Capacitance :

2.672nF

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

2672pF @ 16V

Vgs(th) (Max) @ Id :

3V @ 250µA

REACH SVHC :

No SVHC

Packaging :

Tube

Supplier Device Package :

D2PAK

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Width :

9.65mm

Lead Free :

Lead Free