IRF3709LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On Max :

9 mΩ

Current Rating :

90A

Rds On (Max) @ Id, Vgs :

9mOhm @ 15A, 10V

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 5V

Power Dissipation-Max :

3.1W Ta 120W Tc

Turn-Off Delay Time :

21 ns

Gate to Source Voltage (Vgs) :

20V

Drain to Source Resistance :

10.5mOhm

Input Capacitance :

2.672nF

Drain to Source Breakdown Voltage :

30V

Max Operating Temperature :

150°C

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Number of Pins :

3

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

3V @ 250µA

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2672pF @ 16V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Rise Time :

171ns

Fall Time (Typ) :

9.2 ns

Published :

2001

Drain to Source Voltage (Vdss) :

30V

Mount :

Through Hole

Supplier Device Package :

TO-262

Continuous Drain Current (ID) :

90A

Lead Free :

Lead Free

Power Dissipation :

120W

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Series :

HEXFET®

Voltage - Rated DC :

30V

Packaging :

Tube