IRF3708SPBF
- Mfr.Part #
- IRF3708SPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 62A D2PAK
- Stock
- 5,129
- In Stock :
- 5,129
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 87W
- Voltage - Rated DC :
- 30V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 2417pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.8V 10V
- Height :
- 4.826mm
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 4.5V
- Current Rating :
- 62A
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 17.6 ns
- Vgs (Max) :
- ±12V
- Nominal Vgs :
- 2 V
- Drain to Source Breakdown Voltage :
- 30V
- Resistance :
- 12mOhm
- RoHS Status :
- RoHS Compliant
- Rds On (Max) @ Id, Vgs :
- 12m Ω @ 15A, 10V
- Continuous Drain Current (ID) :
- 62A
- Gate to Source Voltage (Vgs) :
- 12V
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 7.2 ns
- Rise Time :
- 50ns
- Packaging :
- Tube
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 3.7 ns
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Width :
- 9.65mm
- Published :
- 2004
- Threshold Voltage :
- 2V
- Length :
- 10.668mm
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 87W Tc
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Series :
- HEXFET®
- Datasheets
- IRF3708SPBF

N-Channel Tube 12m Ω @ 15A, 10V ±12V 2417pF @ 15V 24nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3708SPBF Overview
A device's maximal input capacitance is 2417pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 62A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 17.6 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2V threshold voltage.This device reduces its overall power consumption by using drive voltage (2.8V 10V).
IRF3708SPBF Features
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 17.6 ns
a threshold voltage of 2V
IRF3708SPBF Applications
There are a lot of Infineon Technologies
IRF3708SPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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