IRF3708PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

12mOhm

REACH SVHC :

No SVHC

Power Dissipation :

87W

Voltage - Rated DC :

30V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2V @ 250μA

Element Configuration :

Single

Vgs (Max) :

±12V

FET Type :

N-Channel

Series :

HEXFET®

Threshold Voltage :

2V

Rds On (Max) @ Id, Vgs :

12m Ω @ 15A, 10V

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

87W Tc

Turn On Delay Time :

7.2 ns

Dual Supply Voltage :

30V

Rise Time :

50ns

Published :

2000

Nominal Vgs :

2 V

Number of Pins :

3

Continuous Drain Current (ID) :

62A

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

12V

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

3.7 ns

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Factory Lead Time :

14 Weeks

Recovery Time :

65 ns

ECCN Code :

EAR99

Width :

4.69mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Length :

10.5156mm

Input Capacitance (Ciss) (Max) @ Vds :

2417pF @ 15V

Turn-Off Delay Time :

17.6 ns

Mount :

Through Hole

Current Rating :

62A

Package / Case :

TO-220-3

Case Connection :

DRAIN

Radiation Hardening :

No

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

248A

Number of Terminations :

3

Height :

8.763mm

Packaging :

Tube

Termination :

Through Hole

Drain to Source Breakdown Voltage :

30V