IRF3708PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Power Dissipation :

87W

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

12m Ω @ 15A, 10V

Case Connection :

DRAIN

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2417pF @ 15V

Mount :

Through Hole

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

248A

Packaging :

Tube

Power Dissipation-Max :

87W Tc

Termination :

Through Hole

Nominal Vgs :

2 V

Threshold Voltage :

2V

Transistor Element Material :

SILICON

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 4.5V

Current Rating :

62A

Fall Time (Typ) :

3.7 ns

Factory Lead Time :

14 Weeks

Vgs (Max) :

±12V

Height :

8.763mm

Continuous Drain Current (ID) :

62A

Width :

4.69mm

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

17.6 ns

Rise Time :

50ns

Length :

10.5156mm

Turn On Delay Time :

7.2 ns

REACH SVHC :

No SVHC

Recovery Time :

65 ns

Published :

2000

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Voltage - Rated DC :

30V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

3

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

30V

Resistance :

12mOhm

Dual Supply Voltage :

30V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2V @ 250μA