IRF3707ZSTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

230A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 21A, 10V

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

42A

Drain to Source Voltage (Vdss) :

30V

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

59A Tc

ECCN Code :

EAR99

FET Type :

N-Channel

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

1210pF @ 15V

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0095Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

57W Tc

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Published :

2003

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

40 mJ

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

DS Breakdown Voltage-Min :

30V