IRF3707ZSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Height :

4.83mm

Continuous Drain Current (ID) :

59A

Resistance :

12.5mOhm

Turn On Delay Time :

9.8 ns

Nominal Vgs :

1.8 V

Input Capacitance (Ciss) (Max) @ Vds :

1210pF @ 15V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Recovery Time :

59 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation :

57W

Avalanche Energy Rating (Eas) :

40 mJ

Length :

10.67mm

FET Type :

N-Channel

REACH SVHC :

No SVHC

Number of Elements :

1

Case Connection :

DRAIN

Power Dissipation-Max :

57W Tc

JESD-609 Code :

e3

Fall Time (Typ) :

3.6 ns

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Threshold Voltage :

1.8V

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 21A, 10V

Width :

9.652mm

Current Rating :

59A

Gate to Source Voltage (Vgs) :

20V

Voltage - Rated DC :

30V

Mounting Type :

Surface Mount

Packaging :

Tube

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Rise Time :

41ns

Turn-Off Delay Time :

12 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

Terminal Form :

Gull wing

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

42A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2003

ECCN Code :

EAR99

Lead Free :

Lead Free

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Dual Supply Voltage :

30V

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Series :

HEXFET®