IRF3707ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Turn On Delay Time :

9.8 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

57W Tc

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Height :

8.763mm

Voltage - Rated DC :

30V

Mounting Type :

Through Hole

Power Dissipation :

57W

Rds On Max :

9.5 mΩ

Radiation Hardening :

No

Rise Time :

41ns

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

1.8V

Max Operating Temperature :

175°C

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1210pF @ 15V

Input Capacitance :

1.21nF

Resistance :

9.5Ohm

Current Rating :

59A

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Lead Free :

Lead Free

Number of Pins :

3

Min Operating Temperature :

-55°C

Nominal Vgs :

1.8 V

Fall Time (Typ) :

3.6 ns

Series :

HEXFET®

Package / Case :

TO-220-3

Turn-Off Delay Time :

12 ns

Rds On (Max) @ Id, Vgs :

9.5mOhm @ 21A, 10V

Recovery Time :

21 ns

Packaging :

Tube

Drain to Source Voltage (Vdss) :

30V

Drain to Source Resistance :

12.5mOhm

Supplier Device Package :

TO-220AB

Number of Elements :

1

Continuous Drain Current (ID) :

59A

Published :

2003

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

59A Tc

RoHS Status :

RoHS Compliant

Length :

10.5156mm

Width :

4.69mm

Dual Supply Voltage :

30V

Mount :

Through Hole