IRF3707ZLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-262

Continuous Drain Current (ID) :

59A

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V

Mount :

Through Hole

Published :

2008

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

10.668mm

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Mounting Type :

Through Hole

Power Dissipation :

57W

Lead Free :

Lead Free

Voltage - Rated DC :

30V

Max Operating Temperature :

175°C

Radiation Hardening :

No

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.25V @ 25μA

Min Operating Temperature :

-55°C

Rise Time :

41ns

Width :

4.826mm

Height :

9.65mm

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1210pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

57W Tc

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

3.6 ns

Number of Pins :

3

Turn-Off Delay Time :

12 ns

Operating Temperature :

-55°C~175°C TJ

Drain to Source Resistance :

12.5mOhm

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

9.8 ns

Rds On (Max) @ Id, Vgs :

9.5mOhm @ 21A, 10V

Rds On Max :

9.5 mΩ

Packaging :

Tube

FET Type :

N-Channel

Series :

HEXFET®

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Input Capacitance :

1.21nF

Current Rating :

59A

Drain to Source Voltage (Vdss) :

30V