IRF3707ZCSPBF
- Mfr.Part #
- IRF3707ZCSPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 59A D2PAK
- Stock
- 49,967
- In Stock :
- 49,967
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.25V @ 25μA
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 1210pF @ 15V
- RoHS Status :
- RoHS Compliant
- Supplier Device Package :
- D2PAK
- Rds On Max :
- 9.5 mΩ
- Power Dissipation-Max :
- 57W Tc
- Resistance :
- 12.5mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 59A Tc
- Number of Pins :
- 3
- Series :
- HEXFET®
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 1.21nF
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Published :
- 2008
- Turn-Off Delay Time :
- 12 ns
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- Drain to Source Breakdown Voltage :
- 30V
- Current Rating :
- 59A
- Voltage - Rated DC :
- 30V
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 30V
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 57W
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 3.6 ns
- Rise Time :
- 41ns
- Drain to Source Resistance :
- 12.5mOhm
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 59A
- Operating Temperature :
- -55°C~175°C TJ
- Max Operating Temperature :
- 175°C
- Rds On (Max) @ Id, Vgs :
- 9.5mOhm @ 21A, 10V
- Datasheets
- IRF3707ZCSPBF

N-Channel Tube 9.5mOhm @ 21A, 10V ±20V 1210pF @ 15V 15nC @ 4.5V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3707ZCSPBF Overview
A device's maximal input capacitance is 1210pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 59A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 12 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 12.5mOhm.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRF3707ZCSPBF Features
a continuous drain current (ID) of 59A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 12.5mOhm
a 30V drain to source voltage (Vdss)
IRF3707ZCSPBF Applications
There are a lot of Infineon Technologies
IRF3707ZCSPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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