IRF3707STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Power Dissipation :

87W

Drain to Source Resistance :

12.5mOhm

Rise Time :

78ns

Turn On Delay Time :

8.5 ns

Drain to Source Breakdown Voltage :

30V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

12.5mOhm @ 15A, 10V

Turn-Off Delay Time :

11.8 ns

Min Operating Temperature :

-55°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Rds On Max :

12.5 mΩ

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Supplier Device Package :

D2PAK

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Fall Time (Typ) :

3.3 ns

Max Operating Temperature :

175°C

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

3

Vgs (Max) :

±20V

Input Capacitance :

1.99nF

Published :

2004

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

87W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1990pF @ 15V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

62A