IRF3707LPBF
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- Mfr.Part #
- IRF3707LPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 62A TO262
- Stock
- 31,046
- In Stock ：
- 31,046
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Voltage - Rated DC :
- 30V
- Fall Time (Typ) :
- 3.3 ns
- Series :
- HEXFET®
- Current Rating :
- 62A
- Power Dissipation :
- 87W
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 87W Tc
- Turn-Off Delay Time :
- 11.8 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 4.5V
- Published :
- 2004
- Vgs (Max) :
- ±20V
- Rds On Max :
- 12.5 mΩ
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Continuous Drain Current (ID) :
- 62A
- Min Operating Temperature :
- -55°C
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance :
- 1.99nF
- Rds On (Max) @ Id, Vgs :
- 12.5mOhm @ 15A, 10V
- Packaging :
- Tube
- Max Operating Temperature :
- 175°C
- Mounting Type :
- Through Hole
- Drain to Source Resistance :
- 17mOhm
- Drain to Source Breakdown Voltage :
- 30V
- Element Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1990pF @ 15V
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- TO-262
- Mount :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 30V
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Rise Time :
- 78ns
- Datasheets
- IRF3707LPBF
N-Channel Tube 12.5mOhm @ 15A, 10V ±20V 1990pF @ 15V 19nC @ 4.5V 30V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF3707LPBF Overview
A device's maximum input capacitance is 1990pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 62A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 11.8 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 17mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRF3707LPBF Features
a continuous drain current (ID) of 62A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11.8 ns
single MOSFETs transistor is 17mOhm
a 30V drain to source voltage (Vdss)
IRF3707LPBF Applications
There are a lot of Infineon Technologies
IRF3707LPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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