IRF3707

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Pulsed Drain Current-Max (IDM) :

230A

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

42A

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1990pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

62A Tc

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Number of Elements :

1

Power Dissipation-Max :

87W Tc

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Avalanche Energy Rating (Eas) :

40 mJ

Vgs(th) (Max) @ Id :

3V @ 250µA

Series :

HEXFET®

Terminal Position :

Single

Drain-source On Resistance-Max :

0.0095Ohm

Qualification Status :

Not Qualified

Package / Case :

TO-220-3

DS Breakdown Voltage-Min :

30V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 15A, 10V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Published :

2000

Number of Terminations :

2

Vgs (Max) :

±20V

Case Connection :

DRAIN