IRF3706STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

20V

Power Dissipation :

88W

Published :

2004

Mount :

Surface Mount

Vgs (Max) :

±12V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 4.5V

Supplier Device Package :

D2PAK

Number of Pins :

3

Mounting Type :

Surface Mount

Rise Time :

87ns

Current - Continuous Drain (Id) @ 25°C :

77A Tc

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Gate to Source Voltage (Vgs) :

12V

Series :

HEXFET®

Turn-Off Delay Time :

17 ns

Drain to Source Resistance :

10.5mOhm

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2V @ 250μA

Max Operating Temperature :

175°C

Drain to Source Voltage (Vdss) :

20V

Rds On Max :

8.5 mΩ

Input Capacitance :

2.41nF

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

4.8 ns

Power Dissipation-Max :

88W Tc

Min Operating Temperature :

-55°C

Input Capacitance (Ciss) (Max) @ Vds :

2410pF @ 10V

Continuous Drain Current (ID) :

77A

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

8.5mOhm @ 15A, 10V