IRF3706PBF
- Mfr.Part #
- IRF3706PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 77A TO220AB
- Stock
- 50,673
- In Stock :
- 50,673
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 77A Tc
- Termination :
- Through Hole
- Packaging :
- Tube
- Number of Pins :
- 3
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.8V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2410pF @ 10V
- Max Operating Temperature :
- 175°C
- Turn-Off Delay Time :
- 17 ns
- Rds On Max :
- 8.5 mΩ
- Continuous Drain Current (ID) :
- 77A
- Power Dissipation :
- 88W
- Rds On (Max) @ Id, Vgs :
- 8.5mOhm @ 15A, 10V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Lead Free :
- Lead Free
- Series :
- HEXFET®
- Min Operating Temperature :
- -55°C
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation-Max :
- 88W Tc
- Drain to Source Voltage (Vdss) :
- 20V
- Mount :
- Through Hole
- Dual Supply Voltage :
- 20V
- Published :
- 2004
- Fall Time (Typ) :
- 4.8 ns
- Drain to Source Resistance :
- 10.5mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 87ns
- RoHS Status :
- RoHS Compliant
- Drain to Source Breakdown Voltage :
- 20V
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Resistance :
- 8.5mOhm
- Supplier Device Package :
- TO-220AB
- Package / Case :
- TO-220-3
- Current Rating :
- 77A
- Nominal Vgs :
- 2 V
- Threshold Voltage :
- 2V
- Gate to Source Voltage (Vgs) :
- 12V
- Input Capacitance :
- 2.41nF
- Voltage - Rated DC :
- 20V
- Vgs (Max) :
- ±12V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 4.5V
- Datasheets
- IRF3706PBF

N-Channel Tube 8.5mOhm @ 15A, 10V ±12V 2410pF @ 10V 35nC @ 4.5V 20V TO-220-3
IRF3706PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2410pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 77A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 17 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 10.5mOhm. The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2V threshold voltage. Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (2.8V 10V), this device helps reduce its overall power consumption.
IRF3706PBF Features
a continuous drain current (ID) of 77A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 10.5mOhm
a threshold voltage of 2V
a 20V drain to source voltage (Vdss)
IRF3706PBF Applications
There are a lot of Infineon Technologies
IRF3706PBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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