IRF3706LPBF
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- Mfr.Part #
- IRF3706LPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 77A TO262
- Stock
- 47
- In Stock ：
- 47
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2004
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 8.5mOhm @ 15A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Resistance :
- 8.5mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 77A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Voltage (Vdss) :
- 20V
- Power Dissipation :
- 88W
- Supplier Device Package :
- TO-262
- Rise Time :
- 87ns
- Fall Time (Typ) :
- 4.8 ns
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 17 ns
- Current Rating :
- 77A
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.8V 10V
- Vgs (Max) :
- ±12V
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 12V
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 4.5V
- Series :
- HEXFET®
- Voltage - Rated DC :
- 20V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Rds On Max :
- 8.5 mΩ
- Power Dissipation-Max :
- 88W Tc
- Drain to Source Resistance :
- 10.5mOhm
- Max Operating Temperature :
- 175°C
- Continuous Drain Current (ID) :
- 77A
- Input Capacitance :
- 2.41nF
- Input Capacitance (Ciss) (Max) @ Vds :
- 2410pF @ 10V
- Drain to Source Breakdown Voltage :
- 20V
- Packaging :
- Tube
- Element Configuration :
- Single
- Datasheets
- IRF3706LPBF
N-Channel Tube 8.5mOhm @ 15A, 10V ±12V 2410pF @ 10V 35nC @ 4.5V 20V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF3706LPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2410pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 77A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 17 ns.This device has a drain-to-source resistance of 10.5mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 12V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.8V 10V), this device contributes to a reduction in overall power consumption.
IRF3706LPBF Features
a continuous drain current (ID) of 77A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 17 ns
single MOSFETs transistor is 10.5mOhm
a 20V drain to source voltage (Vdss)
IRF3706LPBF Applications
There are a lot of Infineon Technologies
IRF3706LPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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