IRF3704ZSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Power Dissipation-Max :

57W Tc

FET Type :

N-Channel

Height :

4.83mm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Pulsed Drain Current-Max (IDM) :

260A

JESD-609 Code :

e3

Number of Pins :

3

Continuous Drain Current (ID) :

67A

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Turn-Off Delay Time :

11 ns

Lead Free :

Lead Free

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1220pF @ 10V

Series :

HEXFET®

Power Dissipation :

57W

Voltage - Rated DC :

20V

Fall Time (Typ) :

4.2 ns

Rise Time :

38ns

Published :

2004

Turn On Delay Time :

8.9 ns

ECCN Code :

EAR99

Terminal Form :

Gull wing

Current Rating :

67A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

2

Length :

10.67mm

Resistance :

7.9mOhm

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Current-Max (Abs) (ID) :

42A

Width :

9.65mm

Recovery Time :

17 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

20V

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Rds On (Max) @ Id, Vgs :

7.9m Ω @ 21A, 10V

Transistor Application :

SWITCHING

Nominal Vgs :

2.1 V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Mounting Type :

Surface Mount

Mount :

Surface Mount

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Packaging :

Tube

Vgs (Max) :

±20V