IRF3704ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Nominal Vgs :

2.1 V

Input Capacitance :

1.22nF

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

7.9mOhm @ 21A, 10V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1220pF @ 10V

Resistance :

7.9mOhm

Max Operating Temperature :

175°C

Min Operating Temperature :

-55°C

Power Dissipation-Max :

57W Tc

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

8.9 ns

Vgs(th) (Max) @ Id :

2.55V @ 250µA

Rds On Max :

7.9 mΩ

Turn-Off Delay Time :

11 ns

Rise Time :

38ns

Series :

HEXFET®

Recovery Time :

17 ns

Radiation Hardening :

No

Height :

8.77mm

Dual Supply Voltage :

20V

Lead Free :

Lead Free

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

20V

Supplier Device Package :

TO-220AB

Threshold Voltage :

2.1V

Termination :

Through Hole

Drain to Source Resistance :

11.1mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Packaging :

Tube

Package / Case :

TO-220-3

Power Dissipation :

57W

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

67A

Continuous Drain Current (ID) :

67A

Fall Time (Typ) :

4.2 ns

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Number of Pins :

3

Published :

2004

Number of Elements :

1

Voltage - Rated DC :

20V