IRF3704ZCS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

67A Tc

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

225

Number of Elements :

1

JESD-609 Code :

e0

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.55V @ 250µA

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 4.5V

Drain Current-Max (Abs) (ID) :

42A

Terminal Position :

Single

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin/Lead (Sn/Pb)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

DS Breakdown Voltage-Min :

20V

Series :

HEXFET®

Number of Terminations :

2

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

7.9m Ω @ 21A, 10V

Power Dissipation-Max :

57W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1220pF @ 10V

Published :

2003

Drain-source On Resistance-Max :

0.0079Ohm

Drain to Source Voltage (Vdss) :

20V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

36 mJ

Mounting Type :

Surface Mount

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

260A

Operating Mode :

ENHANCEMENT MODE