IRF3704PBF
- Mfr.Part #
- IRF3704PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 77A TO220AB
- Stock
- 3,207
- In Stock :
- 3,207
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1996pF @ 10V
- Nominal Vgs :
- 3 V
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 20V
- Power Dissipation-Max :
- 87W Tc
- Power Dissipation :
- 87W
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tube
- Series :
- HEXFET®
- Current Rating :
- 77A
- Lead Free :
- Lead Free
- Rise Time :
- 98ns
- Dual Supply Voltage :
- 20V
- Termination :
- Through Hole
- Turn-Off Delay Time :
- 12 ns
- Drain to Source Resistance :
- 13.5mOhm
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn On Delay Time :
- 8.4 ns
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Number of Pins :
- 3
- Package / Case :
- TO-220-3
- Rds On Max :
- 9 mΩ
- Threshold Voltage :
- 3V
- Max Operating Temperature :
- 175°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 4.5V
- Continuous Drain Current (ID) :
- 77A
- Input Capacitance :
- 1.996nF
- Current - Continuous Drain (Id) @ 25°C :
- 77A Tc
- Height :
- 8.77mm
- Published :
- 2000
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Supplier Device Package :
- TO-220AB
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 9mOhm @ 15A, 10V
- Voltage - Rated DC :
- 20V
- Datasheets
- IRF3704PBF

N-Channel Tube 9mOhm @ 15A, 10V ±20V 1996pF @ 10V 19nC @ 4.5V 20V TO-220-3
IRF3704PBF Overview
A device's maximal input capacitance is 1996pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 77A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 12 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 13.5mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 3V threshold voltage.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRF3704PBF Features
a continuous drain current (ID) of 77A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 12 ns
single MOSFETs transistor is 13.5mOhm
a threshold voltage of 3V
a 20V drain to source voltage (Vdss)
IRF3704PBF Applications
There are a lot of Infineon Technologies
IRF3704PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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