IRF3704

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

20V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

42A

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

Number of Terminations :

2

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0079Ohm

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

260

Published :

2000

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

77A Tc

Terminal Position :

Single

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

260A

ECCN Code :

EAR99

Power Dissipation-Max :

87W Tc

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

36 mJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1996pF @ 10V