IRF3703PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

250

Current - Continuous Drain (Id) @ 25°C :

210A Tc

ECCN Code :

EAR99

Height :

15.24mm

Rise Time :

123ns

Series :

HEXFET®

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Power Dissipation :

230W

Input Capacitance (Ciss) (Max) @ Vds :

8250pF @ 25V

Number of Pins :

3

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Threshold Voltage :

4V

Contact Plating :

Tin

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Number of Terminations :

3

FET Type :

N-Channel

Width :

4.69mm

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Nominal Vgs :

4 V

Current Rating :

210A

Resistance :

2.8Ohm

Continuous Drain Current (ID) :

210A

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Radiation Hardening :

No

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Turn On Delay Time :

18 ns

Power Dissipation-Max :

3.8W Ta 230W Tc

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 76A, 10V

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Length :

10.5156mm

Voltage - Rated DC :

30V

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

53 ns

Published :

2004

Drive Voltage (Max Rds On,Min Rds On) :

7V 10V

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

75A

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Fall Time (Typ) :

24 ns

Dual Supply Voltage :

30V

Gate Charge (Qg) (Max) @ Vgs :

209nC @ 10V

Operating Temperature :

-55°C~175°C TJ