IRF362

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

300W

Product Status :

Active

Package Shape :

Round

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

-

Avalanche Energy Rating (Eas) :

980 mJ

Surface Mount :

No

Terminal Form :

PIN/PEG

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Manufacturer :

Rochester Electronics LLC

Current - Continuous Drain (Id) @ 25°C :

22A

Pulsed Drain Current-Max (IDM) :

88 A

Rds On (Max) @ Id, Vgs :

-

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On, Min Rds On) :

-

Terminal Position :

BOTTOM

Polarity/Channel Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Series :

-

Terminal Finish :

TIN LEAD

Number of Terminals :

2

Reach Compliance Code :

Unknown

DS Breakdown Voltage-Min :

400 V

Drain to Source Resistance :

250 mΩ

JESD-30 Code :

O-MBFM-P2

Supplier Device Package :

TO-204AA (TO-3)

JEDEC-95 Code :

TO-204AE

Drain-source On Resistance-Max :

0.25 Ω

Qualification Status :

COMMERCIAL

Case Connection :

DRAIN

Pbfree Code :

No

FET Feature :

-

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

-

Continuous Drain Current (ID) :

22 A

Package :

Bulk

Operating Temperature :

-

Package / Case :

TO-204AA, TO-3

Mounting Type :

Through Hole

RoHS :

Compliant

Drain to Source Voltage (Vdss) :

400 V