IRF3610SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Transistor Application :

SWITCHING

Radiation Hardening :

No

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

460 mJ

Continuous Drain Current (ID) :

103A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Nominal Vgs :

4 V

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

REACH SVHC :

No SVHC

Fall Time (Typ) :

43 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

333W

Turn On Delay Time :

15 ns

Rise Time :

55ns

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 62A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Series :

HEXFET®

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

5380pF @ 25V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

ECCN Code :

EAR99

Terminal Form :

Gull wing

Number of Elements :

1

Case Connection :

DRAIN

Published :

2013

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

103A Tc

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

333W Tc

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

77 ns