IRF350

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

O-MBFM-P2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

Infineon Technologies AG

Terminal Form :

PIN/PEG

Avalanche Energy Rating (Eas) :

11.3 mJ

Number of Terminals :

2

Power Dissipation-Max (Abs) :

150 W

JEDEC-95 Code :

TO-204AA

Subcategory :

FET General Purpose Power

Terminal Finish :

Tin/Lead (Sn/Pb)

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

56 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

14 A

Case Connection :

DRAIN

Package Shape :

Round

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Surface Mount :

No

DS Breakdown Voltage-Min :

400 V

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Terminal Position :

BOTTOM

Drain-source On Resistance-Max :

0.4 Ω

Number of Elements :

1

Qualification Status :

Not Qualified