IRF3415STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Number of Elements :

1

Element Configuration :

Single

Fall Time (Typ) :

69 ns

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Termination :

SMD/SMT

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

42m Ω @ 22A, 10V

Number of Pins :

3

Turn On Delay Time :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

3.8W Ta 200W Tc

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Length :

10.668mm

Voltage - Rated DC :

150V

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Recovery Time :

390 ns

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Dual Supply Voltage :

150V

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

JESD-609 Code :

e3

Power Dissipation :

3.8W

Avalanche Energy Rating (Eas) :

590 mJ

Factory Lead Time :

12 Weeks

Width :

9.65mm

Transistor Application :

SWITCHING

Mount :

Surface Mount

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

4.826mm

Drain to Source Breakdown Voltage :

150V

Continuous Drain Current (ID) :

43A

Current - Continuous Drain (Id) @ 25°C :

43A Tc

FET Type :

N-Channel

Threshold Voltage :

4V

Turn-Off Delay Time :

71 ns

Case Connection :

DRAIN

Resistance :

4.2mOhm

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Current Rating :

43A

Nominal Vgs :

4 V

Published :

1998

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

55ns

Lead Free :

Contains Lead, Lead Free