IRF3415SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

43A Tc

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

42m Ω @ 22A, 10V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

43A

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Avalanche Energy Rating (Eas) :

590 mJ

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Published :

1998

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.8W Ta 200W Tc

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

DS Breakdown Voltage-Min :

150V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tube

Drain to Source Voltage (Vdss) :

150V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Terminal Position :

Single

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Pulsed Drain Current-Max (IDM) :

150A

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.042Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Mounting Type :

Surface Mount