IRF3415S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Series :

HEXFET®

Peak Reflow Temperature (Cel) :

225

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Pulsed Drain Current-Max (IDM) :

150A

Power Dissipation-Max :

3.8W Ta 200W Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

HTS Code :

8541.29.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

42m Ω @ 22A, 10V

Terminal Finish :

Tin/Lead (Sn/Pb)

Avalanche Energy Rating (Eas) :

590 mJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

43A

Surface Mount :

yes

Drain-source On Resistance-Max :

0.042Ohm

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

JESD-609 Code :

e0

Drain to Source Voltage (Vdss) :

150V

Published :

1998

FET Type :

N-Channel

DS Breakdown Voltage-Min :

150V

ECCN Code :

EAR99

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA