IRF3415PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

69 ns

REACH SVHC :

No SVHC

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

12 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Dual Supply Voltage :

150V

Mounting Type :

Through Hole

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Termination :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

200W Tc

Power Dissipation :

200W

Avalanche Energy Rating (Eas) :

590 mJ

JESD-609 Code :

e3

Number of Terminations :

3

Resistance :

42mOhm

Drain to Source Breakdown Voltage :

150V

Rise Time :

55ns

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Lead Pitch :

2.54mm

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Current Rating :

43A

Width :

4.69mm

ECCN Code :

EAR99

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Published :

2004

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

42m Ω @ 22A, 10V

Current :

43A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Voltage :

150V

Recovery Time :

390 ns

Voltage - Rated DC :

150V

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Height :

15.24mm

Turn-Off Delay Time :

71 ns

Vgs (Max) :

±20V

Series :

HEXFET®

Length :

10.5156mm

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Nominal Vgs :

4 V

Lead Free :

Lead Free

Threshold Voltage :

4V

Continuous Drain Current (ID) :

43A