IRF3315STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

1.3nF

Fall Time (Typ) :

38 ns

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

9.6 ns

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Rds On Max :

82 mΩ

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Published :

2004

Continuous Drain Current (ID) :

21A

Series :

HEXFET®

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

3.8W Ta 94W Tc

Max Operating Temperature :

175°C

Power Dissipation :

94W

Length :

10.668mm

Rise Time :

32ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Width :

9.65mm

Height :

4.826mm

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

150V

RoHS Status :

RoHS Compliant

Supplier Device Package :

D2PAK

Drain to Source Breakdown Voltage :

150V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

FET Type :

N-Channel

Turn-Off Delay Time :

49 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Resistance :

82mOhm

Rds On (Max) @ Id, Vgs :

82mOhm @ 12A, 10V

Current - Continuous Drain (Id) @ 25°C :

21A Tc