IRF3315STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.826mm

Rise Time :

32ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

49 ns

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

82m Ω @ 12A, 10V

Continuous Drain Current (ID) :

21A

Resistance :

82mOhm

Number of Terminations :

2

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Series :

HEXFET®

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Contains Lead

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Mounting Type :

Surface Mount

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

84A

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Drain to Source Breakdown Voltage :

150V

Vgs (Max) :

±20V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Turn On Delay Time :

9.6 ns

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Voltage - Rated DC :

150V

Gate to Source Voltage (Vgs) :

20V

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

3.8W Ta 94W Tc

Mount :

Surface Mount

Width :

9.65mm

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e3

Current Rating :

21A

Power Dissipation :

94W

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

38 ns

Length :

10.668mm