IRF3315STRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

350 mJ

JESD-30 Code :

R-PSSO-G2

Published :

1997

Rds On (Max) @ Id, Vgs :

82m Ω @ 12A, 10V

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

84A

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Drain to Source Voltage (Vdss) :

150V

Mounting Type :

Surface Mount

Terminal Position :

Single

Power Dissipation-Max :

3.8W Ta 94W Tc

Terminal Form :

Gull wing

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

150V

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Number of Elements :

1

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

21A

Transistor Application :

SWITCHING

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Surface Mount :

yes

Qualification Status :

Not Qualified

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.082Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V