IRF3315SPBF

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Mfr.Part #
IRF3315SPBF
Manufacturer
International Rectifier
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
HEXFET POWER MOSFET
Stock
9,874
In Stock :
9,874

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
82m Ω @ 12A, 10V
Nominal Vgs :
4 V
Vgs (Max) :
±20V
Number of Elements :
1
Element Configuration :
Single
Mount :
Surface Mount
Operating Temperature :
-55°C~175°C TJ
Drain to Source Breakdown Voltage :
150V
Time@Peak Reflow Temperature-Max (s) :
30
Lead Free :
Lead Free
Mounting Type :
Surface Mount
Power Dissipation-Max :
3.8W Ta 94W Tc
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Drain-source On Resistance-Max :
0.082Ohm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Series :
HEXFET®
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Termination :
SMD/SMT
Current - Continuous Drain (Id) @ 25°C :
21A Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
260
Fall Time (Typ) :
38 ns
RoHS Status :
ROHS3 Compliant
Dual Supply Voltage :
150V
Current Rating :
21A
Height :
4.83mm
Length :
10.67mm
Additional Feature :
AVALANCHE RATED
Power Dissipation :
84W
FET Type :
N-Channel
Continuous Drain Current (ID) :
21A
Gate Charge (Qg) (Max) @ Vgs :
95nC @ 10V
Published :
1997
Width :
9.65mm
Pulsed Drain Current-Max (IDM) :
84A
Threshold Voltage :
4V
JESD-30 Code :
R-PSSO-G2
Case Connection :
DRAIN
Rise Time :
32ns
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
REACH SVHC :
No SVHC
Number of Terminations :
2
Voltage - Rated DC :
150V
Terminal Form :
Gull wing
Turn On Delay Time :
9.6 ns
Number of Pins :
3
Radiation Hardening :
No
Turn-Off Delay Time :
49 ns
Datasheets
IRF3315SPBF
Introducing Transistors - FETs, MOSFETs - Single International Rectifier IRF3315SPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Number of Pins:3, IRF3315SPBF pinout, IRF3315SPBF datasheet PDF, IRF3315SPBF amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier IRF3315SPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRF3315SPBF


N-Channel Tube 82m Ω @ 12A, 10V ±20V 1300pF @ 25V 95nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF3315SPBF Overview


A device's maximum input capacitance is 1300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 21A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=150V, and this device has a drain-to-source breakdown voltage of 150V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 49 ns.Its maximum pulsed drain current is 84A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.6 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF3315SPBF Features


a continuous drain current (ID) of 21A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 84A.
a threshold voltage of 4V


IRF3315SPBF Applications


There are a lot of Infineon Technologies
IRF3315SPBF applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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