IRF3315S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.082Ohm

Packaging :

Tube

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

82m Ω @ 12A, 10V

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Published :

1997

Number of Elements :

1

Avalanche Energy Rating (Eas) :

350 mJ

HTS Code :

8541.29.00.95

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

84A

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Peak Reflow Temperature (Cel) :

225

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Vgs (Max) :

±20V

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

21A

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Surface Mount :

yes

DS Breakdown Voltage-Min :

150V

Drain to Source Voltage (Vdss) :

150V

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Power Dissipation-Max :

3.8W Ta 94W Tc