IRF3315PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

32ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Elements :

1

Drain to Source Breakdown Voltage :

150V

Continuous Drain Current (ID) :

27A

Dual Supply Voltage :

150V

Element Configuration :

Single

Packaging :

Tube

Voltage - Rated DC :

150V

RoHS Status :

ROHS3 Compliant

Height :

8.77mm

Transistor Application :

SWITCHING

Power Dissipation :

136W

Pulsed Drain Current-Max (IDM) :

84A

Mounting Type :

Through Hole

Factory Lead Time :

14 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

JESD-609 Code :

e3

Series :

HEXFET®

Nominal Vgs :

4 V

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Published :

1998

Length :

10.54mm

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Turn On Delay Time :

9.6 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Termination :

Through Hole

Rds On (Max) @ Id, Vgs :

70m Ω @ 12A, 10V

Power Dissipation-Max :

94W Tc

Fall Time (Typ) :

38 ns

Number of Terminations :

3

FET Type :

N-Channel

Case Connection :

DRAIN

Turn-Off Delay Time :

49 ns

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Lead Free :

Contains Lead, Lead Free

Width :

4.69mm

Package / Case :

TO-220-3

Current Rating :

27A

Resistance :

82mOhm

Recovery Time :

260 ns

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ