IRF3315PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Mount :

Through Hole

Number of Pins :

3

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

150V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

84A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Current Rating :

27A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

4 V

Dual Supply Voltage :

150V

Threshold Voltage :

4V

Height :

8.77mm

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Turn-Off Delay Time :

49 ns

Termination :

Through Hole

Length :

10.54mm

Lead Free :

Contains Lead, Lead Free

Width :

4.69mm

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Power Dissipation :

136W

Continuous Drain Current (ID) :

27A

Factory Lead Time :

14 Weeks

Rds On (Max) @ Id, Vgs :

70m Ω @ 12A, 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Power Dissipation-Max :

94W Tc

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Number of Elements :

1

Fall Time (Typ) :

38 ns

Recovery Time :

260 ns

Radiation Hardening :

No

Resistance :

82mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JEDEC-95 Code :

TO-220AB

Rise Time :

32ns

Turn On Delay Time :

9.6 ns

Published :

1998

Voltage - Rated DC :

150V