IRF331

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

150V

Packaging :

Tube

Power Dissipation-Max :

136W Tc

ECCN Code :

EAR99

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

27A

Number of Elements :

1

Drain to Source Voltage (Vdss) :

150V

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

350 mJ

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

70m Ω @ 12A, 10V

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

108A

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

JEDEC-95 Code :

TO-220AB

Drain-source On Resistance-Max :

0.07Ohm

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Published :

1997

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Number of Terminations :

3

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V