IRF3305PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

75A

Pulsed Drain Current-Max (IDM) :

560A

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

860 mJ

Case Connection :

DRAIN

Power Dissipation-Max :

330W Tc

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Number of Elements :

1

Width :

4.826mm

Rds On (Max) @ Id, Vgs :

8m Ω @ 75A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

55V

Number of Terminations :

3

Fall Time (Typ) :

34 ns

Drain to Source Breakdown Voltage :

55V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

43 ns

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Package / Case :

TO-220-3

Published :

2004

ECCN Code :

EAR99

Rise Time :

88ns

Transistor Element Material :

SILICON

Turn On Delay Time :

16 ns

Length :

10.668mm

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3650pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

75A

Height :

16.51mm

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.008Ohm

Mount :

Through Hole

Additional Feature :

AVALANCHE RATED

Element Configuration :

Single

Series :

HEXFET®

Power Dissipation :

330W