IRF3305

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

560A

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.008Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Transistor Application :

SWITCHING

Published :

2004

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Series :

HEXFET®

Case Connection :

DRAIN

Power Dissipation-Max :

330W Tc

Drain Current-Max (Abs) (ID) :

75A

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Additional Feature :

AVALANCHE RATED

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

3650pF @ 25V

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

Packaging :

Tube

Drain to Source Voltage (Vdss) :

55V

Rds On (Max) @ Id, Vgs :

8m Ω @ 75A, 10V

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

470 mJ