IRF3205ZSTRRPBF
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- Mfr.Part #
- IRF3205ZSTRRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A D2PAK
- Stock
- 1,381
- In Stock ：
- 1,381
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 6.5mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 3450pF @ 25V
- Supplier Device Package :
- D2PAK
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 67 ns
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 18 ns
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Rds On Max :
- 6.5 mΩ
- Operating Temperature :
- -55°C~175°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Voltage (Vdss) :
- 55V
- Turn-Off Delay Time :
- 45 ns
- Height :
- 4.826mm
- Drain to Source Resistance :
- 6.5mOhm
- Min Operating Temperature :
- -55°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 175°C
- Rds On (Max) @ Id, Vgs :
- 6.5mOhm @ 66A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 75A
- Lead Free :
- Lead Free
- Input Capacitance :
- 3.45nF
- Published :
- 2010
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Power Dissipation :
- 170W
- Width :
- 9.65mm
- Length :
- 10.668mm
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 170W Tc
- Voltage - Rated DC :
- 55V
- Drain to Source Breakdown Voltage :
- 55V
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Rise Time :
- 95ns
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 75A
- Series :
- HEXFET®
- Number of Pins :
- 3
- Datasheets
- IRF3205ZSTRRPBF
N-Channel Tape & Reel (TR) 6.5mOhm @ 66A, 10V ±20V 3450pF @ 25V 110nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF3205ZSTRRPBF Overview
A device's maximal input capacitance is 3450pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 75A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 55V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 45 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 6.5mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 18 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 55V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF3205ZSTRRPBF Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 6.5mOhm
a 55V drain to source voltage (Vdss)
IRF3205ZSTRRPBF Applications
There are a lot of Infineon Technologies
IRF3205ZSTRRPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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