IRF3205ZS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

DS Breakdown Voltage-Min :

55V

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 66A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Drain Current-Max (Abs) (ID) :

75A

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Peak Reflow Temperature (Cel) :

225

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.0065ohm

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

3450pF @ 25V

Drain to Source Voltage (Vdss) :

55V

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power Dissipation-Max :

170W Tc

Pulsed Drain Current-Max (IDM) :

440A

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

250 mJ

Number of Terminations :

2

Case Connection :

DRAIN

Vgs (Max) :

±20V

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Published :

2001

JESD-609 Code :

e0

Mounting Type :

Surface Mount

ECCN Code :

EAR99

FET Type :

N-Channel