IRF3205ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead, Lead Free

Power Dissipation-Max :

170W Tc

Pulsed Drain Current-Max (IDM) :

440A

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Turn On Delay Time :

18 ns

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Width :

4.826mm

Voltage - Rated DC :

55V

Terminal Finish :

MATTE TIN OVER NICKEL

Element Configuration :

Single

Continuous Drain Current (ID) :

75A

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 66A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Current Rating :

75A

Power Dissipation :

170W

Dual Supply Voltage :

55V

Resistance :

6.5mOhm

Termination :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Published :

2001

Input Capacitance (Ciss) (Max) @ Vds :

3450pF @ 25V

Drain to Source Breakdown Voltage :

55V

Radiation Hardening :

No

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Number of Terminations :

3

Nominal Vgs :

4 V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

45 ns

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

250 mJ

FET Type :

N-Channel

Length :

10.668mm

Gate to Source Voltage (Vgs) :

20V

Rise Time :

95ns

Recovery Time :

42 ns

Vgs (Max) :

±20V

Height :

9.017mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Fall Time (Typ) :

67 ns

Mount :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

4V

Number of Elements :

1

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Peak Reflow Temperature (Cel) :

250