IRF3205ZL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2003

Drain-source On Resistance-Max :

0.0065ohm

JESD-609 Code :

e0

DS Breakdown Voltage-Min :

55V

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

250 mJ

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Peak Reflow Temperature (Cel) :

225

Drain to Source Voltage (Vdss) :

55V

Transistor Application :

SWITCHING

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

75A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

170W Tc

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3450pF @ 25V

Pulsed Drain Current-Max (IDM) :

440A

ECCN Code :

EAR99

Terminal Finish :

Tin/Lead (Sn/Pb)

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Packaging :

Tube

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 66A, 10V

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

JESD-30 Code :

R-PSIP-T3